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U.S. Department of Energy
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Thermal conductivities of thin, sputtered optical films

Technical Report ·
DOI:https://doi.org/10.2172/6109768· OSTI ID:6109768
The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO{sub 2}/Si{sub 3}N{sub 4}){sup n} and Al(Al{sub 2}O{sub 3}/AIN){sup n}. Sputtered films of more conventional materials like SiO{sub 2}, Al{sub 2}O{sub 3}, Ta{sub 2}O{sub 5}, Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented.
Research Organization:
Pacific Northwest Lab., Richland, WA (United States)
Sponsoring Organization:
DOE; DOD; USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
DOE Contract Number:
AC06-76RL01830
OSTI ID:
6109768
Report Number(s):
PNL-SA-19687; ON: DE92004486; CNN: RADC F3 0602-90-F-0008
Country of Publication:
United States
Language:
English