Thermal conductivities of thin, sputtered optical films

Technical Report · Wed May 01 04:00:00 EDT 1991

DOI:https://doi.org/10.2172/10108496· OSTI ID:10108496

Henager, Jr, C H; Pawlewicz, W T

The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO{sub 2}/Si{sub 3}N{sub 4}){sup n} and Al(Al{sub 2}O{sub 3}/AIN){sup n}. Sputtered films of more conventional materials like SiO{sub 2}, Al{sub 2}O{sub 3}, Ta{sub 2}O{sub 5}, Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented.

• Research Organization: Pacific Northwest Lab., Richland, WA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
• DOE Contract Number: AC06-76RL01830
• OSTI ID: 10108496
• Report Number(s): PNL-SA--19687; ON: DE92004486; CNN: Contract RADC F3 0602-90-F-0008
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104
360204
42 ENGINEERING
426002
ALUMINIUM NITRIDES
ALUMINIUM OXIDES
BORON NITRIDES
CERAMICS
DIELECTRIC MATERIALS
LASERS AND MASERS
METALS
OPTICAL PROPERTIES
OPTICS
PHYSICAL PROPERTIES
SILICON
SILICON CARBIDES
SILICON NITRIDES
TANTALUM OXIDES
THERMAL CONDUCTIVITY
THIN FILMS
TITANIUM