Metastability of Oxygen Donors in AlGaN
- Xerox Palo Alto Research Center, Palo Alto, California 94304 (United States)
- Center for Advanced Materials, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
Experimental and theoretical evidence is presented for the metastability of oxygen donors in Al{sub x}Ga {sub 1{minus}x}N . As the aluminum content increases, Hall effect measurements reveal an increase in the electron activation energy, consistent with the emergence of a deep DX level from the conduction band. Persistent photoconductivity is observed in Al{sub 0.39} Ga{sub 0.61} N:O at temperatures below 150 K after exposure to light, with an optical threshold energy of 1.3 eV. A configuration coordinate diagram is obtained from first-principles calculations and yields values for the capture barrier, emission barrier, and optical threshold which are in good agreement with the experimental results. {copyright} {ital 1998} {ital The American Physical Society}
- OSTI ID:
- 610733
- Journal Information:
- Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 18 Vol. 80; ISSN 0031-9007; ISSN PRLTAO
- Country of Publication:
- United States
- Language:
- English
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