Stable and metastable Si negative-U centers in AlGaN and AlN
- Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden)
Electron paramagnetic resonance studies of Si-doped Al{sub x}Ga{sub 1−x}N (0.79 ≤ x ≤ 1.0) reveal two Si negative-U (or DX) centers, which can be separately observed for x ≥ 0.84. We found that for the stable DX center, the energy |E{sub DX}| of the negatively charged state DX{sup −}, which is also considered as the donor activation energy, abruptly increases with Al content for x ∼ 0.83–1.0 approaching ∼240 meV in AlN, whereas E{sub DX} remains to be close to the neutral charge state E{sub d} for the metastable DX center (∼11 meV below E{sub d} in AlN).
- OSTI ID:
- 22350954
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 105; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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