Optical gain characteristics in Al-rich AlGaN/AlN quantum wells

Journal Article · Mon May 05 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4875592· OSTI ID:22269186

Oto, Takao; Banal, Ryan G.; Funato, Mitsuru; Kawakami, Yoichi ^[1]

---

1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)

The optical gain characteristics of Al-rich AlGaN/AlN quantum wells (QWs) were assessed by the variable stripe length method at room temperature. An Al{sub 0.79}Ga{sub 0.21}N/AlN QW with a well width of 5 nm had a large optical gain of 140 cm{sup −1}. Increasing the excitation length induced a redshift due to the gain consumption and the consequent saturation of the amplified spontaneous emission. Moreover, a change in the dominant gain polarization with Al composition, which was attributed to switching of the valence band ordering of strained AlGaN/AlN QWs at Al compositions of ∼0.8, was experimentally demonstrated.

• OSTI ID: 22269186
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
GAIN
QUANTUM WELLS
TEMPERATURE RANGE 0273-0400 K