High quality semipolar (11{sup ¯}02) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities
- JFE Mineral Co. Ltd., Chiba 260-0826 (Japan)
Adjusting the growth conditions from those for c-plane growth realizes high-quality semipolar (11{sup ¯}02) AlGaN/AlN quantum wells (QWs) with atomically smooth surfaces and abrupt interfaces on AlN substrates. Upon comparing the optical properties to those of c-plane QWs using time-integrated and time-resolved photoluminescence spectroscopy, the estimated internal electric field is much smaller in (11{sup ¯}02) AlGaN/AlN QWs than in c-plane QWs. Thus, (11{sup ¯}02) AlGaN/AlN QWs have narrower emission line widths and remarkably faster radiative recombination lifetimes, realizing highly efficient deep ultraviolet emissions.
- OSTI ID:
- 22303852
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 104; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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