Negative-/ital U/ property of the /ital DX/ center in Al/sub /ital x//Ga/sub 1/minus//ital x//As:Si
Journal Article
·
· Phys. Rev. B: Condens. Matter; (United States)
We present two major points in this paper: (1) Statistics derived from thenegative-/ital U/ property of the /ital DX/ center are not consistent withexisting Hall experiments of Si-doped Al/sub /ital x//Ga/sub 1/minus//ital x//As.(2) The discrepancy between the negative-/ital U/ model and Hall experiments canbe improved if there exist two different donors /ital SD/ and /ital DX/ withcomparable concentrations /ital N//sub /ital SD// and /ital N//sub /ital DX//,/ital N//sub /ital SD///N/sub DX/ increases with increasing /ital N//sub Si/./ital DX/ is a negative-/ital U/ center binding two electrons and /ital SD/ is ashallow donor. /ital SD/ centers provide electrons and the electrons arecaptured by /ital DX/ centers, and therefore the Fermi energy is no longerpinned to the /ital DX/ energy level. Many experiments are reinterpreted in thisview.
- Research Organization:
- Center of Theoretical Physics, Chinese Center of Advanced Science aduate Technology (World Laboratory), 52 Sanlihe Road, Beijing, China(US); Graduate School, University of Science and Technology of China, Academia Sinica, P.O. Box 3908, Beijing, China; Graduate School, University of Science and Technology of China, Academia Sinica, P.O. Box 3908, Beijing, China; Department of Physics, University of California, Berkeley, Berkeley, California 94720; Materials and Chemical Sciences Division, Lawrence
- OSTI ID:
- 6096349
- Journal Information:
- Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 40:2; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
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