Two-electron state and negative-[ital U] property of sulfur [ital DX] centers in GaAs[sub 1[minus][ital x]]P[sub [ital x]]

Journal Article · Thu Sep 15 04:00:00 EDT 1994 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.50.7996· OSTI ID:7229055

Li, M F; Luo, Y Y ^[1]; Yu, P Y ^[2]; Weber, E R; Fujioka, H ^[3]; Du, A Y; Chua, S J ^[1]; Lim, Y T ^[4]

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1. Center for Optoelectronics, Department of Electrical Engineering, National University of Singapore, Singapore 0511 (Singapore)
2. Department of Physics, University of California, and Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
3. Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720 (United States) Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
4. Hewlett-Packard Singapore, Singapore 0410 (Singapore)

A new way to study the two-electron state in [ital DX] centers at atmospheric pressure is reported. It is based on the idea of codoping a GaAs[sub 0.6]P[sub 0.4] sample with a uniform background of Te shallow donors (as source of free carriers) and a Gaussian distribution of sulfur [ital DX] centers by ion implantation. Using both capacitance-voltage profiling and deep-level transient spectroscopy measurements, we demonstrate that the ground state of the sulfur [ital DX] center traps two electrons and therefore has negative [ital U].

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7229055
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 50:11; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DOPING
DEEP LEVEL TRANSIENT SPECTROSCOPY
ENERGY LEVELS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GROUND STATES
ION IMPLANTATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SPECTROSCOPY
SUBSTOICHIOMETRY
SULFUR ADDITIONS
TELLURIUM ADDITIONS
TELLURIUM ALLOYS
TRAPS