Surface emitting laser diode with Al/sub x/Ga/sub 1-x/As /GaAs multilayered heterostructure

Journal Article · Fri Mar 01 04:00:00 EST 1985 · J. Vac. Sci. Technol., B; (United States)

DOI:https://doi.org/10.1116/1.583099· OSTI ID:6104950

Ogura, M; Yao, T

We realize the first distributed feedback surface emitting laser diode withAl/sub 0.3/Ga/sub 0.7/As/GaAs multilayered heterostructure both by opticalpumping and current injection. Sharp stimulated emission is observed at theselected wavelength determined by the optical cavity. Lateral p--n junction is formed by a selective Zn diffusion. The threshold current is 120 mA at 150 K with the active layer thickness of 6 ..mu..m and width of 3 ..mu..m. The temperature coefficient of the lasing wavelength is equal to a conventioal DFB laser diode. Anomalous mixing is found in the course of Zn diffusion and succeeding thermal treatment.

• Research Organization: Electrotechnical Laboratory, Sakura-mura, Niihari-gun, Ibaraki 305, Japan
• OSTI ID: 6104950
• Journal Information: J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 3:2; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ATOM TRANSPORT
CURRENTS
DATA
DIFFUSION
DIMENSIONS
ELECTRIC CURRENTS
ELEMENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASER CAVITIES
LASERS
METALS
MIXING
NEUTRAL-PARTICLE TRANSPORT
NUMERICAL DATA
OPTICAL PUMPING
P-N JUNCTIONS
PNICTIDES
PUMPING
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STIMULATED EMISSION
THICKNESS
THRESHOLD CURRENT
ZINC