Electron spectroscopic studies of the Dy/Si(111) interface
Low-energy electron diffraction (LEED), x-ray photoelectron (XPS), ultraviolet photoelectron (UPS), and Auger electron (AES) surface spectroscopic techniques were used to study the chemical interaction between Dy atoms and Si atoms at the Dy--Si interface at room temperature, as well as Dy silicides formed after annealing at 400 /degree/C for 30 min. Experiment shows that at low coverages (less than or equal to4 monolayers (ML)) atom intermixing takes place, causing chemical shifts of Dy 4/ital f/ and Dy 3/ital d/. However, no significant chemical shift of Si 2/ital p/ has been observed, suggesting a lack of strong chemical bonds of the Dy--Si type. With coverage increasing, a (7/times/7) LEED pattern from a clean Si(111) surface turns into a (1/times/1), and finally becomes ambiguous. After annealing for 30 min at 400 /degree/C, the Dy silicides formed with an atomic concentration ratio of Dy to Si of /similar to/1:2. The binding energies of Dy 4/ital f/ (Dy Si/sub 2/), Dy 3/ital d/(Dy Si/sub 2/), and Si 2/ital p/(Dy Si/sub 2/) are 5.5, 1295.2, and 98.65 eV, respectively.
- Research Organization:
- Institute of Semiconductors, Academia Sinica, P. O. Box 912, Beijing, Peoples Republic of China and Laboratory for Surface Physics, Academia Sinica, P. O. Box 603, Beijing, Peoples Republic of China(CN)
- OSTI ID:
- 6100348
- Journal Information:
- J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 7:4; ISSN JVTAD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360102* -- Metals & Alloys-- Structure & Phase Studies
360104 -- Metals & Alloys-- Physical Properties
AUGER ELECTRON SPECTROSCOPY
BINDING ENERGY
CHEMICAL BONDS
COHERENT SCATTERING
D STATES
DIFFRACTION
DYSPROSIUM
DYSPROSIUM COMPOUNDS
DYSPROSIUM SILICIDES
ELECTROMAGNETIC RADIATION
ELECTRON DIFFRACTION
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
ELEMENTS
ENERGY
ENERGY LEVELS
F STATES
INTERFACES
IONIZING RADIATIONS
L SHELL
M SHELL
MEDIUM TEMPERATURE
METALS
N SHELL
P STATES
PHOTOELECTRON SPECTROSCOPY
RADIATIONS
RARE EARTH COMPOUNDS
RARE EARTHS
SCATTERING
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SPECTROSCOPY
SURFACE PROPERTIES
X RADIATION