Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

LEED studies of atomic structures of Si[l brace]111[r brace] [radical]3 [times] [radical]3-30[degrees]-metal surface phases. [LEED (low-energy electron diffraction)]

Thesis/Dissertation ·
OSTI ID:7236259

The atomic structure of several Si(111)[radical]3 x [radical]3 - 30[degrees] - metal surfaces has been investigated using dynamical low-energy electron diffraction. A LEED intensity analysis of the Si(111)[radical]3 x [radical]3 - 30[degrees] - B surface has determined that boron atoms replace second-layer Si atoms and a Si adatom is located above each boron atom, the B[sub 5] site. The ideal coverage of this structure is 1/3 of a monolayer of boron atoms and the surface is relaxed. the Si(111)[radical]3 x [radical]3 - 30[degrees] - Mg surface could not be formed; the Si(111)2/3[radical]3 x 2/3[radical]3 - 30[degrees] - Mg surface could, however, be created and is most likely that of a reacted silicide. The formation of a Si(111)3 x 1 - Mg surface is reported with LEED I(V) spectra essentially identical to those of Si(111)3 x 1 - Li, -Na, and -Ag. Therefore, these metal atoms induce the formation of the Si(111)3 x 1 surface structure and are not ordered in the unit cell. The surface structure of the Si(111)[radical]3 x [radical]3 - 30[degrees] - Au surface has been determined to involve a coverage of one monolayer of Au. The Au atoms are chemisorbed on top of the substrate surface in the form of trimers, with the trimer centers located above the position of fourth-layer Si atoms, and the Au atoms are on off-first-layer Si sites. The first layer of Si atoms is missing and the second-layer Si atoms are displaced 0.5 [angstrom] away from the center of symmetry. Si(111)[radical]3 x [radical]3 - 30[degrees] - Ce and 2 x 1 - Ce surfaces have been formed and are most likely those of a silicide.

Research Organization:
State Univ. of New York, Stony Brook, NY (United States)
OSTI ID:
7236259
Country of Publication:
United States
Language:
English