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Deposition of epitaxial layers of semiconductors from liquid and gas phases on a moving substrate

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:6100069
; ;
The method of zone recrystallization with a temperature gradient (ZRTG) provides quasi-equilibrium conditions of growth and makes it possible to obtain perfect epitaxial films of different semiconductor materials. The authors investigated the possibility of the ZRTG method for growing silicon and gallium arsenide films on moving orienting and nonorienting substrates. The growth from a solution in a melt on a moving substrate was unstable. The instability is associated with the trapping of the liquid phase from the container. In the static state, however, it was possible to obtain large-block textured silicon and gallium arsenide films on graphite substrates.
Research Organization:
S. Ordzhonikidze Novocherkassk Polytechnic Institute (USSR)
OSTI ID:
6100069
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 23:11; ISSN INOMA
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
360104 -- Metals & Alloys-- Physical Properties
360602 -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CARBON
CHALCOGENIDES
CRYSTALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTAL MINERALS
ELEMENTS
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GRAPHITE
HEAT TREATMENTS
MELTING
METALS
MINERALS
MOLYBDENUM
NONMETALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PNICTIDES
POLYCRYSTALS
QUARTZ
RECRYSTALLIZATION
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SUBSTRATES
TEMPERATURE EFFECTS
TEMPERATURE GRADIENTS
THIN FILMS
TRANSITION ELEMENTS
VAPOR CONDENSATION
ZONE MELTING