Epitaxy of semiconductor layered structures
Conference
·
OSTI ID:5928090
These proceedings collect papers on semiconductors. Topics include: pulsed laser crystallization of Germanium/silicon films on silicon substrates; epitaxial growth of CdTe on GaAs/Si; transmission electron microscopy studies of defect structures; and organometallic epitaxy.
- OSTI ID:
- 5928090
- Report Number(s):
- CONF-8711229-
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ABSTRACTS
CRYSTAL STRUCTURE
DOCUMENT TYPES
ELECTRICAL PROPERTIES
EPITAXY
FABRICATION
INTERFACES
LEADING ABSTRACT
MATERIALS
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
STRUCTURAL CHEMICAL ANALYSIS
SUBSTRATES
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ABSTRACTS
CRYSTAL STRUCTURE
DOCUMENT TYPES
ELECTRICAL PROPERTIES
EPITAXY
FABRICATION
INTERFACES
LEADING ABSTRACT
MATERIALS
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
STRUCTURAL CHEMICAL ANALYSIS
SUBSTRATES