Semiconductor-based heterostructures: Interfacial structure and stability

Conference · Wed Jan 01 04:00:00 EST 1986

OSTI ID:5211705

Green, M L; Baglin, J E.E.; Chin, G Y; Deckman, H W; Mayo, W; Narasinham, D

These proceedings compile the papers presented at a conference on the subject of semiconductor-based heterostructures-stability and interfacial structure. Some of the topics discussed are: In-situ interdiffusion measurements in HgTe-CdTe superlattices; lattice parameter anomaly in an MOCVD CdTe epitaxial layer grown on a GaAs substrate; phase formation in Amorphous W--Si thin films; and properties of ZnO/CuInSe/sub 2/ heterojunctions.

• OSTI ID: 5211705
• Report Number(s): CONF-8605111--; ISBN: 0-87339-056-3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360102 -- Metals & Alloys-- Structure & Phase Studies
360601* -- Other Materials-- Preparation & Manufacture
ABSTRACTS
ALLOYS
AMORPHOUS STATE
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COPPER COMPOUNDS
COPPER SELENIDES
DEPOSITION
DOCUMENT TYPES
FABRICATION
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM SELENIDES
JUNCTIONS
LATTICE PARAMETERS
LEADING ABSTRACT
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
PROCEEDINGS
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SILICON ALLOYS
SUPERLATTICES
SURFACE COATING
TELLURIDES
TELLURIUM COMPOUNDS
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN ALLOYS
ZINC COMPOUNDS
ZINC OXIDES