Materials for infrared detectors and sources; Proceedings of the Symposium, Boston, MA, Dec. 1-5, 1986
The present conference discusses epitaxial semiconductor structures for the IR, materials requirements for IR detectors and imagers, HgCdTe for LWIR imagers and heterojunction devices, epitaxial IV-VI semiconductor films, the growth of bulk IR sensor-material crystals, structure-property relationships in semiconductor alloys, high quality growth of CdTe by the gradient-freeze method, the electronic properties and vacancy-formation energies of HgCdTe vs HgZnTe, and the structure of hydrogenated amorphous carbon IR coatings. Also discussed are tailored microstructures for IR detection, the X-ray characterization of IR materials, subsurface microlattice strain mapping, deep-level defects in CdTe, the MBE HgTe growth process, interdiffused multilayer processing in alloy growth, HgTe-CdTe superlattices grown by photo-MOCVD, InSb in IR detector applications, and CdTe films grown on InSb substrates by organometallic epitaxy.
- OSTI ID:
- 6907111
- Report Number(s):
- CONF-8612152-
- Country of Publication:
- United States
- Language:
- English
Similar Records
Semiconductor-based heterostructures: Interfacial structure and stability
Properties of CdTe films grown by molecular beam epitaxy
Related Subjects
360600 -- Other Materials
440300* -- Miscellaneous Instruments-- (-1989)
47 OTHER INSTRUMENTATION
ABSTRACTS
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DOCUMENT TYPES
ELECTROMAGNETIC RADIATION
EPITAXY
HETEROJUNCTIONS
IMAGES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFRARED RADIATION
JUNCTIONS
LASERS
LEAD COMPOUNDS
LEADING ABSTRACT
LIQUID PHASE EPITAXY
MATERIALS
MEASURING INSTRUMENTS
MEETINGS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOMETERS
PNICTIDES
RADIATION DETECTORS
RADIATIONS
RESEARCH PROGRAMS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SPECIFICATIONS
USES
VAPOR PHASE EPITAXY