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Gaseous ion reactions in SiF/sub 4/ and SiF/sub 4/--D/sub 2/ mixtures

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.332419· OSTI ID:6098116
The gas-phase reactions of D/sup +//sub 2/, D/sup +//sub 3/, SiF/sup +/, and SiF/sup +//sub 3/ with SiF/sub 4/ and of SiF/sup +/ and SiF/sup +//sub 3/ with D/sub 2/ have been studied in the center-of-mass energy range of 0.2--7 eV using a tandem mass spectrometer. Only one reaction of a silicon-containing ion with SiF/sub 4/ was observed, namely the highly endothermic transfer of F/sup -/ from SiF/sub 4/ to SiF/sup +/. Hence the SiF/sub 4/ molecule must be almost unique in showing a virtual absence of gas-phase ionic chemistry in pure SiF/sub 4/ subjected to ionization. Several ion-molecule reactions were observed in the SiF/sub 4/--D/sub 2/ system but of these only the dissociative F/sup -/ transfer from SiF/sub 4/ to D/sub 2//sup +/ is exothermic. The almost total absence of exothermic ion-molecule reactions means that the ionic distribution pertinent to the plasma chemistry of the SiF/sub 4/ and SiF/sub 4/--H/sub 2/ systems will be determined solely by the cross sections of the electron impact ionization processes.
Research Organization:
Davey Laboratory, Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802
DOE Contract Number:
AC02-76ER03416
OSTI ID:
6098116
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 54:6; ISSN JAPIA
Country of Publication:
United States
Language:
English