Collision-induced dissociation and charge transfer reactions of SiF{sub 2}{sup +}(x = 1-4). Thermochemistry of SiF{sub 2} and SiF{sub x}{sup +}
Guided ion beam techniques are used to measure cross sections as a function of kinetic energy for interaction of Xe with SiF{sub x}{sup +}(x = 1-4) ions. Energy dependences of the collision-induced dissociation cross sections are analyzed to yield the following 0 K band dissociation energies (BDEs): D(SiF{sub 3}{sup +}-F) = 0.85 {+-} 0.16 eV, D(SiF{sub 2}{sup +}-F) = 6.29 {+-} 0.10 eV, D(SiF{sup +}-F) = 3.18 {+-} 0.04 eV, and D(Si{sup +}-F) = 7.04 {+-} 0.06 eV. The ionization energies, IE(SiF{sub 2}) = 10.24 {+-} 0.13 eV and IE(SiF{sub 3}) = 9.03 {+-} 0.05 eV, are also measured from analysis of endothermic charge transfer reactions. From these BDEs, measured IEs and previous results, the authors derive heats of formation for the silicon fluoride cations and neutrals.
- OSTI ID:
- 67887
- Report Number(s):
- CONF-9310400--
- Journal Information:
- Bulletin of the American Physical Society, Journal Name: Bulletin of the American Physical Society Journal Issue: 13 Vol. 38; ISSN 0003-0503; ISSN BAPSA6
- Country of Publication:
- United States
- Language:
- English
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