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Submicron area NbN/MgO/NbN tunnel junctions for SIS mixer applications

Conference · · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6093130
; ; ; ; ;  [1]
  1. Center for Space Microelectronics Technology, Jet Propulsion Lab., California Inst. of Technology, Pasadena, CA (US)
This paper reports on progress in the development of submicron area mixer elements for operation in the submillimeter wave range. High current density NbN/MgO/NbN tunnel junctions with areas down to 0.1 {mu}m{sup 2} have been fabricated in both planar and edge geometries. The planar junctions were fabricated from in situ deposited trilayers using electron-beam lithography to pattern submicron area mesas. Modifications of fabrication techniques used in larger area NbN tunnel junctions are required and is discussed.
OSTI ID:
6093130
Report Number(s):
CONF-900944--
Conference Information:
Journal Name: IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 27:2
Country of Publication:
United States
Language:
English

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