Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

NbN/MgO/NbN SIS tunnel junctions for sub-mm wave mixers

Conference · · IEEE Trans. Magn.; (United States)
OSTI ID:6044060
The authors report on the fabrication and testing of all refractory NbN/MgO/NbN SIS tunnel junctions for use as high frequency mixers. Progress in the development of techniques for the fabrication of submicron area tunnel junctions is described. Junction structures which have been investigated include mesa, crossline, and edge geometries. Using reactive sputtering techniques, NbN tunnel junctions with critical currents in excess as 10/sup 4/ A/cm/sup 2/ have been fabricated with V/sub m/ values as high as 65 mV and areas down to 0.1 ..mu..m/sup 2/. Specific capacitance measurements on NbN/MgO/NbN mesa type tunnel junctions give values in the range 60-90 fF/..mu..m/sup 2/. These SIS tunnel junctions have been integrated with antennas and coupling structures for mixer tests in a wave guide receiver at 207 GHz. Preliminary mixer results are reported.
Research Organization:
Jet Propulsion Lab., Pasadena, CA (US)
OSTI ID:
6044060
Report Number(s):
CONF-880812-
Conference Information:
Journal Name: IEEE Trans. Magn.; (United States) Journal Volume: 25:2
Country of Publication:
United States
Language:
English

Similar Records

Submicron area NbN/MgO/NbN tunnel junctions for SIS mixer applications
Conference · Thu Feb 28 23:00:00 EST 1991 · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:6093130

Performance of NbN superconductive tunnel junctions as SIS mixers at 205 GHz
Conference · Thu Feb 28 23:00:00 EST 1991 · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:5746696

Characterization of NbN films and tunnel junctions
Conference · Thu Feb 28 23:00:00 EST 1991 · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:5922770