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Characterization of NbN films and tunnel junctions

Conference · · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:5922770
;  [1]
  1. Center for Space Microelectronics Technology, Jet Propulsion Lab., California Inst. of Technology, Pasadena, CA (US)
This paper discusses properties of NbN films and NbN/MgO/NbN tunnel junctions. NbN junctions are being developed for use in high-frequency, superconductor-insulator-superconductor (SIS) quasiparticle mixers. To properly design mixer circuits, junction and film properties need to be characterized. The specific capacitance of NbN/MgO/NbN junctions has been measured as a function of the product of the normal-state resistance and the junction area (R{sub m}A), and it is found to vary by more than a factor of two (35--85 fF/{Mu}m{sup 2}) over the range of R{sub m}A measured (1000--50 {Omega}{mu}m{sup 2}). This variation is important because the specific capacitance determines the RC speed of the tunnel junction at a given R{sub m}A value. The magnetic penetration depth of NbN films deposited under different conditions is also measured.
OSTI ID:
5922770
Report Number(s):
CONF-900944--
Conference Information:
Journal Name: IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 27:2
Country of Publication:
United States
Language:
English