Determination of the natural valence-band offset in the In/sub x/Ga/sub 1-//sub x/As system

Journal Article · Mon Nov 16 04:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98578· OSTI ID:6092937

Hwang, J; Pianetta, P; Shih, C K; Spicer, W E; Pao, Y; Harris, Jr, J S

The natural valence-band offset (NVBO) between semiconductors in a common anion alloy system can be determined through photoemission core level measurements. In this work, we tested this method in the In/sub x/Ga/sub 1-//sub x/As system. The NVBO between GaAs and InAs is measured to be 0.11 +- 0.05 eV. This result is in approximate agreement with the experimental value of 0.17 +- 0.07 eV determined by x-ray photoemission spectroscopy measurements.

• Research Organization: Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, California 94305
• OSTI ID: 6092937
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:20; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
EMISSION
ENERGY GAP
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
NUMERICAL DATA
PHOTOELECTRON SPECTROSCOPY
PHOTOEMISSION
PNICTIDES
SECONDARY EMISSION
SPECTROSCOPY
VALENCE