X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset

Journal Article · Mon Sep 10 04:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2783214· OSTI ID:21016149

King, P D. C.; Veal, T D; Hatfield, S A; Jefferson, P H; McConville, C F; Kendrick, C E; Swartz, C H; Durbin, S M ^[1]

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1. Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

The valence band offset of wurtzite InN(0001)/yttria stabilized cubic-zirconia (YSZ)(111) heterojunctions is determined by x-ray photoemission spectroscopy to be 1.19{+-}0.17 eV giving a conduction band offset of 3.06{+-}0.20 eV. Consequently, a type-I heterojunction forms between InN and YSZ in the straddling arrangement. The low lattice mismatch and high band offsets suggest potential for use of YSZ as a gate dielectric in high-frequency InN-based electronic devices.

• OSTI ID: 21016149
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 91; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
DIELECTRIC MATERIALS
HETEROJUNCTIONS
INDIUM NITRIDES
PHOTOEMISSION
SEMICONDUCTOR MATERIALS
X-RAY PHOTOELECTRON SPECTROSCOPY
YTTRIUM OXIDES
ZIRCONIUM OXIDES