Determination of the valence band offset of wurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy

Journal Article · Mon Oct 15 04:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2800311· OSTI ID:21013718

Riqing, Zhang; Panfeng, Zhang; Tingting, Kang; Haibo, Fan; Xianglin, Liu; Shaoyan, Yang; Hongyuan, Wei; Qinsheng, Zhu; Zhanguo, Wang ^[1]

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1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 100083 (China)

The valence band offset (VBO) of the wurtzite InN/ZnO heterojunction is directly determined by x-ray photoelectron spectroscopy to be 0.82{+-}0.23 eV. The conduction band offset is deduced from the known VBO value to be 1.85{+-}0.23 eV, which indicates a type-I band alignment for InN/ZnO heterojunction.

• OSTI ID: 21013718
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 91; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
HETEROJUNCTIONS
INDIUM NITRIDES
SEMICONDUCTOR MATERIALS
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES