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Title: Spectroscopic investigations of band offsets of MgO|Al{sub x}Ga{sub 1-x}N epitaxial heterostructures with varying AlN content

Abstract

Epitaxial (111) MgO films were prepared on (0001) Al{sub x}Ga{sub 1−x}N via molecular-beam epitaxy for x = 0 to x = 0.67. Valence band offsets of MgO to Al{sub x}Ga{sub 1−x}N were measured using X-ray photoelectron spectroscopy as 1.65 ± 0.07 eV, 1.36 ± 0.05 eV, and 1.05 ± 0.09 eV for x = 0, 0.28, and 0.67, respectively. This yielded conduction band offsets of 2.75 eV, 2.39 eV, and 1.63 eV for x = 0, 0.28, and 0.67, respectively. All band offsets measured between MgO and Al{sub x}Ga{sub 1−x}N provide a > 1 eV barrier height to the semiconductor.

Authors:
; ; ; ; ; ;
Publication Date:
OSTI Identifier:
22482033
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; EV RANGE; FILMS; MAGNESIUM OXIDES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; VALENCE; X-RAY PHOTOELECTRON SPECTROSCOPY; YIELDS

Citation Formats

Paisley, Elizabeth A., Brumbach, Michael, Allerman, Andrew A., Atcitty, Stanley, Baca, Albert G., Armstrong, Andrew M., Kaplar, Robert J., and Ihlefeld, Jon F., E-mail: jihlefe@sandia.gov. Spectroscopic investigations of band offsets of MgO|Al{sub x}Ga{sub 1-x}N epitaxial heterostructures with varying AlN content. United States: N. p., 2015. Web. doi:10.1063/1.4930309.
Paisley, Elizabeth A., Brumbach, Michael, Allerman, Andrew A., Atcitty, Stanley, Baca, Albert G., Armstrong, Andrew M., Kaplar, Robert J., & Ihlefeld, Jon F., E-mail: jihlefe@sandia.gov. Spectroscopic investigations of band offsets of MgO|Al{sub x}Ga{sub 1-x}N epitaxial heterostructures with varying AlN content. United States. doi:10.1063/1.4930309.
Paisley, Elizabeth A., Brumbach, Michael, Allerman, Andrew A., Atcitty, Stanley, Baca, Albert G., Armstrong, Andrew M., Kaplar, Robert J., and Ihlefeld, Jon F., E-mail: jihlefe@sandia.gov. Mon . "Spectroscopic investigations of band offsets of MgO|Al{sub x}Ga{sub 1-x}N epitaxial heterostructures with varying AlN content". United States. doi:10.1063/1.4930309.
@article{osti_22482033,
title = {Spectroscopic investigations of band offsets of MgO|Al{sub x}Ga{sub 1-x}N epitaxial heterostructures with varying AlN content},
author = {Paisley, Elizabeth A. and Brumbach, Michael and Allerman, Andrew A. and Atcitty, Stanley and Baca, Albert G. and Armstrong, Andrew M. and Kaplar, Robert J. and Ihlefeld, Jon F., E-mail: jihlefe@sandia.gov},
abstractNote = {Epitaxial (111) MgO films were prepared on (0001) Al{sub x}Ga{sub 1−x}N via molecular-beam epitaxy for x = 0 to x = 0.67. Valence band offsets of MgO to Al{sub x}Ga{sub 1−x}N were measured using X-ray photoelectron spectroscopy as 1.65 ± 0.07 eV, 1.36 ± 0.05 eV, and 1.05 ± 0.09 eV for x = 0, 0.28, and 0.67, respectively. This yielded conduction band offsets of 2.75 eV, 2.39 eV, and 1.63 eV for x = 0, 0.28, and 0.67, respectively. All band offsets measured between MgO and Al{sub x}Ga{sub 1−x}N provide a > 1 eV barrier height to the semiconductor.},
doi = {10.1063/1.4930309},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 10,
volume = 107,
place = {United States},
year = {2015},
month = {9}
}

Works referencing / citing this record:

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
journal, December 2017

  • Tsao, J. Y.; Chowdhury, S.; Hollis, M. A.
  • Advanced Electronic Materials, Vol. 4, Issue 1
  • DOI: 10.1002/aelm.201600501