Enhanced radiation effects on submicron narrow-channel NMOS

Journal Article · Tue Nov 30 23:00:00 EST 1982 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1982.4336428· OSTI ID:6089098

Chen, J Y; Henderson, K C; Martin, R; Patterson, D O

The authors have observed an enhanced radiation sensitivity for narrow-channel NMOS transistors. The radiation-induced threshold shift increases rapidly as the channel width decreased below 4 ..mu..m. For example, with 4.5 ..mu..m channel lengths the radiation sensitivity for 0.8 ..mu..m wide FETs is twice that for 5 ..mu..m wide devices. This geometry dependence can be explained qualitatively by two-dimensional potential calculations. These calculations show the fringing field influence on threshold voltage is reduced after radiation, leading to a larger total shift for the narrow channel devices.

• Research Organization: Hughes Research Labs, 3011 Malibu Canyon Rd., Malibu, CA 90265
• OSTI ID: 6089098
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 29:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CALCULATION METHODS
DOSES
ELECTRIC POTENTIAL
GEOMETRY
MATHEMATICS
MOS TRANSISTORS
RADIATION DOSES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SENSITIVITY
THRESHOLD DOSE
TRANSISTORS