Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP
Journal Article
·
· Appl. Phys. Lett.; (United States)
Monolithic integration of 1.3-..mu..m groove lasers and metal-insulator-semiconductor field-effect transistors (MISFET) is achieved by a simple single liquid phase epitaxy (LPE) growth process. Laser thresholds as low as 14 mA for 300-..mu..m cavity length are obtained. MIS depletion mode FET's with n channels on LPE grown InP layer show typical transconductance of 5 to 10 mmho. Laser modulation by the FET current is demonstrated at up to twice the threshold current.
- Research Organization:
- California Inst. of Technology, Pasadena
- OSTI ID:
- 5657826
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:8; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Journal Article
·
Sat Aug 01 00:00:00 EDT 1981
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6322598
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Journal Article
·
Fri Aug 15 00:00:00 EDT 1980
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5216240
High power output, low threshold, inner stripe GaInAsP laser diode on a p-type InP substrate
Journal Article
·
Wed Aug 01 00:00:00 EDT 1984
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6681911
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CONFIGURATION
DIMENSIONS
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELECTRONIC CIRCUITS
ELEMENTS
EPITAXY
EQUIPMENT
FIELD EFFECT TRANSISTORS
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INTEGRATED CIRCUITS
LASER CAVITIES
LASERS
LENGTH
LIQUIDS
MATERIALS
METALS
MICROELECTRONIC CIRCUITS
MODULATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
TRANSISTORS
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CONFIGURATION
DIMENSIONS
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELECTRONIC CIRCUITS
ELEMENTS
EPITAXY
EQUIPMENT
FIELD EFFECT TRANSISTORS
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INTEGRATED CIRCUITS
LASER CAVITIES
LASERS
LENGTH
LIQUIDS
MATERIALS
METALS
MICROELECTRONIC CIRCUITS
MODULATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
TRANSISTORS