Hydrostatic pressure studies of deep donor states in Al sub 0. 3 Ga sub 0. 7 As

Journal Article · · Applied Physics Communications; (USA)

OSTI ID:6082273

Roach, W P; Chandrasekhar, M; Chandrasekhar, H R ^[1]; Chambers, F A; Meese, J M

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1. Univ. of Missouri, Columbia (USA)

The band edge excitons and deep donor levels in AlGaAs are studied as a function of hydrostatic pressure, between 0 and 70 kbar, and temperature, from 15 to 125 K{degree}, using photoluminescence. The energy levels are followed as a function of pressure up to {approx equal} 60 kbar, and the excitation intensity and temperature dependence of the levels are studied at selected pressures typical of the {Lambda} conduction band (CB), the X-CB, and the mixed {Lambda}-L-X states. Activation energies via Arrhenius plots are obtained, and energy level diagrams for the deep donor levels and the bands they ionize to are proposed.

• OSTI ID: 6082273
• Journal Information: Applied Physics Communications; (USA), Journal Name: Applied Physics Communications; (USA) Vol. 10:1-2; ISSN 0277-9374; ISSN APCOD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400102* -- Chemical & Spectral Procedures
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRONIC STRUCTURE
ENERGY LEVELS
EXCITONS
LUMINESCENCE
MATERIALS
PHOTOLUMINESCENCE
PNICTIDES
PRESSURE DEPENDENCE
QUASI PARTICLES
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE