Electronic transitions in bulk Al sub 0. 3 Ga sub 0. 7 As under hydrostatic pressure
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211 (United States)
- Amoco Technology Corporation, P.O. Box 400, Naperville, Illinois 60566 (United States)
We present a study of the radiative transitions in Al{sub 0.3}Ga{sub 0.7}As under hydrostatic pressure in the range 0--70 kbar using photoluminescence at 15 to 125 K. A new trapping center is reported. The center forms an efficient carrier trap, and produces a pressure-induced hysteresis in the intensity of the radiative transitions. A generic large-lattice-relaxation model with an unusually large emission barrier is proposed to understand the strong hysteresis. We postulate that the center is higher than the {ital X} conduction band at ambient pressures, and present arguments to show that it is indeed a different center, not caused by either the {ital DX} or the shallow-donor centers. We have also obtained pressure coefficients of several direct and indirect transitions. The activation energies of various radiative transitions and an understanding of the scattering processes at chosen pressures is obtained from the temperature dependence of the luminescence intensities.
- DOE Contract Number:
- FG02-89ER45402
- OSTI ID:
- 5524947
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 44:24; ISSN PRBMD; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360606* -- Other Materials-- Physical Properties-- (1992-)
ACTIVATION ENERGY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICITY
ENERGY
ENERGY-LEVEL TRANSITIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HYSTERESIS
IMPURITIES
LUMINESCENCE
PHOTOLUMINESCENCE
PIEZOELECTRICITY
PNICTIDES
TRAPPING
VERY HIGH PRESSURE