Formation of a DX center in InP under hydrostatic pressure

Journal Article · Mon Jun 15 04:00:00 EDT 1992 · Physical Review Letters; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.68.3619· OSTI ID:7292317

Wolk, J A; Walukiewicz, W; Thewalt, M L.W.; Haller, E E ^[1]

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1. Department of Physics, University of California-Berkeley, Berkeley, California 94720 (United States) Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States) Department of Physics, Simon Fraser University, Burnaby, British Colombia, V5A 1S6 (Canada) Department of Material Science and Mineral Engineering, University of California, Berkeley, California 94720 (United States)

We have discovered a {ital DX} center in InP:S under hydrostatic pressure greater than 82 kbars. This defect exhibits the persistent photoconductivity typical of such centers. The optical ionization energy for this new {ital DX} center is between 0.86 and 1.02 eV, and we have measured the energy dependence of the optical absorption cross section. The thermal barrier for capture from the shallow donor state into the deep {ital DX} state is in the range 0.23--0.33 eV. We estimate that at zero pressure the energy of the {ital DX} center lies 0.51{plus minus}0.07 eV above the {Gamma} conduction-band minimum.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7292317
• Journal Information: Physical Review Letters; (United States), Journal Name: Physical Review Letters; (United States) Vol. 68:24; ISSN PRLTA; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ACTIVATION ANALYSIS
ALLOYS
CHEMICAL ANALYSIS
DEFECTS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
IMPURITIES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
IONIZATION
MATERIALS
N-TYPE CONDUCTORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOCONDUCTIVITY
PHOTOIONIZATION
PHYSICAL PROPERTIES
PNICTIDES
PRESSURE EFFECTS
SEMICONDUCTOR MATERIALS
STABILIZATION
SULFUR ADDITIONS
VERY HIGH PRESSURE