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Glow discharge amorphous silicon tin alloys

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:6075535
The authors present basic density of states, photoresponse, and transport measurements made on low bandgap a-SiSn:H alloys produced by RF glow discharge deposition of SiH/sub 4/, H/sub 2/ and Sn(CH/sub 3/)/sub 4/. Although they demonstrate major changes in the local bonding structure and the density of states, the normalized photoresponse still remains poor. They provide evidence that two types of defect levels are produced with Sn alloying, and that the resultant density of states increase explains not only the n- to ptype conductivity transition reported earlier, but also the photoresponse behavior. They also report that a-SiSn:H can be doped with P. From the device analysis they suggest that in order to improve the alloy performance significantly, the density of states should be decreased to levels comparable to or lower than those presently obtained in a-Si:H.
Research Organization:
Solar Energy Research Institute, Golden, CO
OSTI ID:
6075535
Report Number(s):
CONF-840561-
Conference Information:
Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
Country of Publication:
United States
Language:
English