Properties of amorphous silicon tin alloys produced using the radio frequency glow discharge technique

Journal Article · Sun Jan 15 04:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94716· OSTI ID:5597859

Mahan, A H; Williamson, D L; Madan, A

Amorphous silicon tin films have been deposited by the glow discharge technique using SiH/sub 4/, H/sub 2/, and SnCl/sub 4/ or Sn (CH/sub 3/)/sub 4/ gas mixtures. An n to p-type conductivity transition with increasing Sn content in the films is found for both types of Sn alloying sources. Such a transition satisfactorily explains the observed dark and light conductivity behavior.

• Research Organization: Solar Energy Research Institute, Golden, Colorado 80401
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 5597859
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALLOYS
AMORPHOUS STATE
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRIC DISCHARGES
ELECTRICAL PROPERTIES
ENERGY GAP
FILMS
GLOW DISCHARGES
MATERIALS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
SILICON ALLOYS
TIN ALLOYS