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Properties of amorphous hydrogenated silicon-tin alloys prepared by radio frequency sputtering

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.333320· OSTI ID:5222703
Amorphous Si/sub 1-x/Sn/sub x/ and Si/sub 1-x/Sn/sub x/ :H (0< or =x< or =0.3) alloy films have been prepared by radio frequency sputtering from composite Si--Sn targets in Ar or Ar-10% H/sub 2/ mixtures at dynamic pressures of 4 or 20 mTorr. The structural characteristics of the alloys have been probed with /sup 119/Sn conversion electron Moessbauer spectroscopy, x-ray diffraction, and infrared absorption. Most of the tin goes into tetrahedral substitutional Si sites at 4 mTorr whereas significant fractions of crystalline ..beta..-Sn are produced at 20 mTorr. The substitutional Sn Moessbauer resonance is systematically characterized with a Lorentzian doublet line shape. Oxygen contamination increases with increasing Sn content in the 20-mTorr films but is attributed to postdeposition oxidation. No evidence is found for Sn--H bonds or interstitial (nonbonded) Sn. The optical band-gap decreases at a rate of -0.056 eV/at. % Sn for alloys containing little or no ..beta..-Sn and for x up to 0.13. Both the optical band gap and the Moessbauer isomer shift extrapolate to ..cap alpha..-Sn (grey tin) behavior at xapprox. =0.3--0.4. The electrical conductivity increases with x at a rate which is not consistent with the measured reduction in band gap and a fixed relative Fermi level. This and the temperature dependence of the conductivity suggest a transition from extended state free-carrier conduction to localized state hopping conduction.
Research Organization:
Physics Department, Colorado School of Mines, Golden, Colorado 80401
DOE Contract Number:
AC02-77CH00178
OSTI ID:
5222703
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 55:8; ISSN JAPIA
Country of Publication:
United States
Language:
English