Properties of amorphous hydrogenated silicon-tin alloys prepared by radio frequency sputtering
Journal Article
·
· J. Appl. Phys.; (United States)
Amorphous Si/sub 1-x/Sn/sub x/ and Si/sub 1-x/Sn/sub x/ :H (0< or =x< or =0.3) alloy films have been prepared by radio frequency sputtering from composite Si--Sn targets in Ar or Ar-10% H/sub 2/ mixtures at dynamic pressures of 4 or 20 mTorr. The structural characteristics of the alloys have been probed with /sup 119/Sn conversion electron Moessbauer spectroscopy, x-ray diffraction, and infrared absorption. Most of the tin goes into tetrahedral substitutional Si sites at 4 mTorr whereas significant fractions of crystalline ..beta..-Sn are produced at 20 mTorr. The substitutional Sn Moessbauer resonance is systematically characterized with a Lorentzian doublet line shape. Oxygen contamination increases with increasing Sn content in the 20-mTorr films but is attributed to postdeposition oxidation. No evidence is found for Sn--H bonds or interstitial (nonbonded) Sn. The optical band-gap decreases at a rate of -0.056 eV/at. % Sn for alloys containing little or no ..beta..-Sn and for x up to 0.13. Both the optical band gap and the Moessbauer isomer shift extrapolate to ..cap alpha..-Sn (grey tin) behavior at xapprox. =0.3--0.4. The electrical conductivity increases with x at a rate which is not consistent with the measured reduction in band gap and a fixed relative Fermi level. This and the temperature dependence of the conductivity suggest a transition from extended state free-carrier conduction to localized state hopping conduction.
- Research Organization:
- Physics Department, Colorado School of Mines, Golden, Colorado 80401
- DOE Contract Number:
- AC02-77CH00178
- OSTI ID:
- 5222703
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 55:8; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Moessbauer spectroscopy of amorphous silicon--tin--hydrogen alloys
Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers
Moessbauer Effect of /sup 119/Sn in the SnS-BaS and SnS-Tl/sub 2/S systems
Journal Article
·
Sun May 01 00:00:00 EDT 1983
· J. Appl. Phys.; (United States)
·
OSTI ID:6062954
Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers
Journal Article
·
Mon Apr 27 00:00:00 EDT 2015
· Applied Physics Letters
·
OSTI ID:22398958
Moessbauer Effect of /sup 119/Sn in the SnS-BaS and SnS-Tl/sub 2/S systems
Journal Article
·
Thu Dec 31 23:00:00 EST 1981
· J. Solid State Chem.; (United States)
·
OSTI ID:5593875
Related Subjects
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ABSORPTION SPECTRA
ALLOYS
AMORPHOUS STATE
ANNEALING
CHEMICAL REACTIONS
COHERENT SCATTERING
DAYS LIVING RADIOISOTOPES
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EVEN-ODD NUCLEI
FILMS
HEAT TREATMENTS
HYDROGENATION
INFRARED SPECTRA
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MOESSBAUER EFFECT
NUCLEI
PHYSICAL PROPERTIES
RADIOISOTOPES
RF SYSTEMS
SCATTERING
SILICON ALLOYS
SPECTRA
SPUTTERING
STABLE ISOTOPES
THIN FILMS
TIN 119
TIN ALLOYS
TIN ISOTOPES
VISIBLE SPECTRA
X-RAY DIFFRACTION
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ABSORPTION SPECTRA
ALLOYS
AMORPHOUS STATE
ANNEALING
CHEMICAL REACTIONS
COHERENT SCATTERING
DAYS LIVING RADIOISOTOPES
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EVEN-ODD NUCLEI
FILMS
HEAT TREATMENTS
HYDROGENATION
INFRARED SPECTRA
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MOESSBAUER EFFECT
NUCLEI
PHYSICAL PROPERTIES
RADIOISOTOPES
RF SYSTEMS
SCATTERING
SILICON ALLOYS
SPECTRA
SPUTTERING
STABLE ISOTOPES
THIN FILMS
TIN 119
TIN ALLOYS
TIN ISOTOPES
VISIBLE SPECTRA
X-RAY DIFFRACTION