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Evidence for graphitic-type bonding in glow discharge hydrogenated amorphous silicon carbon alloys

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.335412· OSTI ID:6013046
Amorphous silicon carbon (a-SiC:H) films have been deposited by the glow discharge technique using SiH/sub 4/ and CH/sub 4/ gas mixtures. At high discharge powers and low deposition chamber pressures, evidence for graphitic-type bonding in C-deficient a-SiC:H is found and correlations are made between the appearance of this bonding with significant changes in the electronic and structural properties. This graphitic-type bonding can be minimized by significant H attachment to C via CH/sub n/ (n = 2, 3) bonding. This results in a-SiC:H films with low gap state densities and sharp Urbach tails.
Research Organization:
Solar Energy Research Institute, Golden, Colorado 80401
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6013046
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 57:8; ISSN JAPIA
Country of Publication:
United States
Language:
English