Spray-deposited ZnO/InP SIS heterostructure solar cells

Conference · Tue May 01 04:00:00 EDT 1984 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:6070575

Eberspacher, C; Bube, R H; Fahrenbruch, A L

ZnO/InP heterostructure solar cells have been fabricated by chemical spraying. Completed devices are stable SIS structures of n-ZnO, an interfacial thermal oxide, and single crystal p-type InP. Forward leakage currents are dominated by tunneling and interfacial recombination processes. High-temperature processing increases the forward leakage currents and yields an apparent increase in the density of near-interface localized states. Thin interfacial oxides suppress the formation of near-interface states, and are essential in obtaining optimal photovoltaic performance. Optimized ZnO/InP heterostructure solar cells have short-circuit current densities greater than 23 mA/cm/sup 2/, open-circuit current voltages of 0.68-0.72 V, fill factors above 0.70 and active area efficiencies of 13-14% in natural sunlight.

• Research Organization: Department of Materials Science and Engineering, Stanford University, Stanford, California
• OSTI ID: 6070575
• Report Number(s): CONF-840561-
• Conference Information: Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHALCOGENIDES
CURRENT DENSITY
CURRENTS
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
EQUIPMENT
FABRICATION
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDE SOLAR CELLS
INDIUM PHOSPHIDES
JUNCTIONS
LEAKS
MATERIALS
N-TYPE CONDUCTORS
OPTIMIZATION
OXIDES
OXYGEN COMPOUNDS
P-TYPE CONDUCTORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SPRAY COATING
SURFACE COATING
ZINC COMPOUNDS
ZINC OXIDES