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Photovoltaic properties of ZnO/CdTe heterojunctions prepared by spray pyrolysis

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.328243· OSTI ID:5220557
An extended investigation has been made of the electrical and photovoltaic properties of heterojunctions prepared by spray-pyrolysis deposition of thin ZnO films on single-crystal p-type CdTe. The principal experimental variables were the substrate temperature and the postdeposition temperature for annealing in H/sub 2/. Under actual sunlight the optimum cell showed an open-circuit voltage of 0.54 V, a short-circuit current of 19.5 mA/cm/sup 2/, and a solar efficiency (referred to the active area) of 8.8%, the highest value obtained to date for an authentic heterojunction on CdTe. The nature of the forward transport mechanism has been investigated, and a tunneling model in which bulk and interface deep traps control the forward characteristics is shown to provide good correlation with the experimental data.
Research Organization:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
OSTI ID:
5220557
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:8; ISSN JAPIA
Country of Publication:
United States
Language:
English