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Trapping of deuterium in krypton-implanted nickel

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.336983· OSTI ID:6067590

Krypton ions with energy 600 keV were implanted in nickel to fluences of 2 x 10/sup 16/ cm/sup -2/ under three different conditions. Deuterium was subsequently introduced into the implanted regions by electrolysis at room temperature. After the diffusible deuterium was permitted to escape, the /sup 2/H(/sup 3/He,/sup 1/H)/sup 4/He nuclear reaction was used to analyze for the trapped deuterium during an isochronal annealing program. The region implanted at 100/sup 0/C with no higher temperature anneal had the largest number of traps; the region implanted at 100/sup 0/C and annealed for 100 min at 500/sup 0/C had considerably less; the region implanted at 500/sup 0/C had the least. Electron diffraction patterns confirmed the existence of solid crystalline krypton in all three regions. Transmission electron microscope studies revealed precipitates with an average diameter of 8 nm in the region implanted at 500/sup 0/C. The two regions implanted at 100/sup 0/C contained smaller precipitates. Trap binding enthalpies were obtained by math modeling. In addition to the traps with binding enthalpy of 0.55 eV reported earlier by other investigators for helium implanted in nickel, a smaller number of traps with binding enthalpies up to 0.83 eV were also found. The trapping of deuterium by various types of imperfections, including the solid krypton precipitates, is discussed.

Research Organization:
Physics Department, Augustana College, Rock Island, Illinois 61201
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
6067590
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 59:8; ISSN JAPIA
Country of Publication:
United States
Language:
English