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S-parameter measurements and applications of superconducting flux flow transistors

Conference · · 1991 IEEE MTT-S International Microwave Symposium Digest
 [1];  [1];  [1];  [1];  [1];  [2]
  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
  2. AT&T Bell Laboratories, Murray Hill, NJ (United States)

Microwave two-port S-parameter measurements and modeling were performed on superconducting flux flow transistors. These transistors, based on the magnetic control of flux flow in an array of high-temperature superconducting weak links, can exhibit significant available power gain at microwave frequencies (over 20 dB at 7-10 GHz in some devices). The input impedance is largely inductive, while the output impedance is resistive and inductive. These devices are potentially useful in numerous applications, including matched amplifiers.< >

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE; Defense Advanced Research Projects Agency (DARPA); US Department of the Navy, Office of Naval Research (ONR)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6063740
Report Number(s):
SAND--91-0381C; CONF-910690--2; ON: DE91009763; CNN: N0017390WR00172; Journal Serial ID: 11-14 Jun 1991
Journal Information:
1991 IEEE MTT-S International Microwave Symposium Digest, Journal Name: 1991 IEEE MTT-S International Microwave Symposium Digest
Publisher:
IEEE
Country of Publication:
United States
Language:
English

References (7)

Morphology control and high critical currents in superconducting thin films in the Tl-Ca-Ba-Cu-O system journal August 1989
Resonant impedance matching of Abrikosov vortex-flow transistors journal March 1991
Growth of epitaxial Ba2YCu3O7−x films on LaAlO3 (001) journal December 1990
Optimization of annealing parameters for the growth of epitaxial Ba2YCu3O7−x films on LaAlO3(100) journal December 1990
Current Distribution in Superconducting Films Carrying Quantized Fluxoids journal August 1964
Single superconducting thin film devices for applications in high T/sub c/ materials circuits journal March 1989
S parameter measurements on single superconducting thin‐film three‐terminal devices made of high‐ T c and low‐ T c materials journal May 1989