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U.S. Department of Energy
Office of Scientific and Technical Information

Flux flow microelectronics

Conference ·
OSTI ID:7011399
; ; ; ; ; ;  [1]; ;  [2]
  1. Sandia National Labs., Albuquerque, NM (United States)
  2. AT and T Bell Labs., Murray Hill, NJ (United States)

Flux-flow based devices such as the superconducting flux flow transistor and magnetically controlled long junctions have been made from thin films of TlCaBaCuO and YBaCuO. The devices are based on the magnetic control of flux flow in their respective structures: a long junction or an array of weak links. The equivalent circuits of the two devices are similar: a low impedance input control line, an output impedance of 3--20 [Omega] and an active current-controlled element. The long junctions have tended to be slower, have lower gain and be somewhat less noisy than their counterparts. The performance of circuits such as narrowband and distributed amplifiers (50 GHz bandwidths, noise figures < 3 dB), phase shifters (continuous with < 2dB loss 4--40 GHz), logic gates (2--3 ps gate delays) and memories made using these devices will be compared and analyzed.

Research Organization:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Organization:
DOE; DOD; USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
7011399
Report Number(s):
SAND-92-1913C; CONF-920802--24; ON: DE93000756
Country of Publication:
United States
Language:
English