Growth of (110) GaAs/GaAs by molecular beam epitaxy
The simultaneous molecular beam epitaxy (MBE) growth of (100) and (110) GaAs/GaAs intentionally doped with Si(approx.1E16/cm3) was studied as a function of substrate temperature, arsenic overpressure, and epitaxial growth rate, using scanning electron and optical microscopy, liquid helium photoluminescence (PL), and electronic characterization. For the (110) epitaxal layers, an increase in morphological defect density and degradation of PL signal was observed with a lowering of the substrate temperature from 570C. Capacitance-voltage (CV) and Hall effect measurements yield room temperature donor concentrations for the (100) films of n approx. 7E15/cm3 while the (110) layers exhibit electron concentrations of n approx. 2E17/cm3. Hall measurements at 77K on the (100) films show the expected mobility enhancement of Si donors, whereas the (110) epi layers become insulating or greatly compensated. This behavior suggests that room temperature conduction in the (110) films is due to a deeper donor partially compensated by an acceptor level whose concentration is of the same order of magnitude as that of any electrically active Si. Temperature-dependent Hall effect indicates that the activation energy of the deeper donor level lies approx.145 MeV from the conduction band. PL and Hall effect indicate that the better quality (110) material is grown by increasing the arsenic flux during MBE growth. The nature of the defects involved with the growth process is discussed.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA); Varian Solid State Microwave Div., Santa Clara, CA (USA)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 6047859
- Report Number(s):
- LBL-19743; CONF-850421-15; ON: DE86005215
- Resource Relation:
- Conference: 2. spring meeting of the Materials Research Society, San Francisco, CA, USA, 15 Apr 1985; Other Information: Paper copy only, copy does not permit microfiche production
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY
DOPED MATERIALS
ELECTRICAL PROPERTIES
FILMS
HALL EFFECT
PHOTOLUMINESCENCE
SILICON
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
LUMINESCENCE
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES
SEMIMETALS
360601* - Other Materials- Preparation & Manufacture