Josephson LSI fabrication technology using NbN/MgO/NbN tunnel junctions

Conference · Fri Mar 01 04:00:00 EST 1991 · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6047532

Aoyagi, M; Nakagawa, H; Kurosawa, I; Takada, S ^[1]

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1. Electrotechnical Lab., I-1-4 Umezono, Tsukuba-shi, Ibaraki-ken 305 (JP)

The authors have developed Josphson LSI fabrication technology using NbN/MgO/NbN tunnel junctions. This paper reports on deposition process of the NbN electrode investigated to obtain high uniformity of the electrical properties. The deposition process of the MgO tunnel barrier was investigated to obtain high reproducibility of the Josephson critical current density. The NbN film with high Tc of 15 K was obtained. The reproducibility of the MgO deposition rate was improved. The 10-bit instruction 128-word ROM unit chip was successfully fabricated using the NbN/MgO/NbN junction LSI technology with the 3 {mu}m design rule. The READ operation test was performed for a few 10-bit words. The total access time was measured to be 710 ps. The uniformity and the reproducibility of the critical current density in the LSI chip were improved. The application of the NbN/MgO/NbN tunnel junction to the Josephson LSI fabrication technology was demonstrated.

• OSTI ID: 6047532
• Report Number(s): CONF-900944--
• Conference Information: Journal Name: IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 27:2
• Country of Publication: United States
• Language: English

Related Subjects

665412* -- Superconducting Devices-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALKALINE EARTH METAL COMPOUNDS
CHALCOGENIDES
CHEMICAL COMPOSITION
CRITICAL CURRENT
CURRENT DENSITY
CURRENTS
DESIGN
DIFFUSION BARRIERS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
FABRICATION
JOSEPHSON JUNCTIONS
JUNCTIONS
LAYERS
MAGNESIUM COMPOUNDS
MAGNESIUM OXIDES
NIOBIUM COMPOUNDS
NIOBIUM NITRIDES
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTORY METAL COMPOUNDS
SUPERCONDUCTING JUNCTIONS
SUPERCONDUCTIVITY
TECHNOLOGY ASSESSMENT
TRANSITION ELEMENT COMPOUNDS
TUNNEL EFFECT