A simple and robust niobium Josephson junction integrated circuit process

Conference · Fri Mar 01 04:00:00 EST 1991 · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6047509

Barfknecht, A T ^[1]; Ruby, R C; Ko, H ^[2]

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1. Conductus, Inc., Sunnyvale, CA (US)
2. Hewlett-Packard Co., Palo Alto, CA (United States)

This paper reports on a simple and robust process for fabricating low-T{sub c} Josephson junction integrated circuits that has been developed. The process is designed around the NB/Al{sub 2}O{sub 3}--Al/Nb trilayer, and utilizes nine masking steps to form two separate levels of trilayer Josephson junctions, as well as resistors, capacitors, and transmission lines. Materials used for interresistors, capacitors, and transmission lines. Materials used for interlayer dielectrics and passivation layers are silicon dioxide and silicon nitride formed by Plasma Enhanced Chemical vapor Deposition (PECVD). The PECVD equipment that we use yields a high deposition rate at moderate substrate temperatures. The authors see no degradation of the junction characteristic due to these depositions. The measured loss tangent of this dielectric at 10 GHz using a parallel plate technique in 4.44 {times} 10{sup {minus}4}.

• OSTI ID: 6047509
• Report Number(s): CONF-900944--
• Conference Information: Journal Name: IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 27:2
• Country of Publication: United States
• Language: English

Related Subjects

665412* -- Superconducting Devices-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CAPACITORS
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIELECTRIC PROPERTIES
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
ELEMENTS
EQUIPMENT
FABRICATION
INTEGRATED CIRCUITS
JOSEPHSON JUNCTIONS
JUNCTIONS
LAYERS
METALS
MICROELECTRONIC CIRCUITS
NIOBIUM
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PLASMA
RESISTORS
SOLID-STATE PLASMA
SUPERCONDUCTING JUNCTIONS
SURFACE COATING
TRANSITION ELEMENTS