Radiation effects on distortion characteristics of power GaAs Mesfet amplifiers

Journal Article · Tue Nov 30 23:00:00 EST 1982 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1982.4336401· OSTI ID:6046437

Moghe, S B; Borrego, J M; Gutmann, R J

A nonlinear MESFET model that explains the degradation in power GaAs MESFET amplifier third order intermodulation distortion (IM/sub 3/) characteristics following neutron irradiation is presented. The model verifies the experimental data and shows that the significant increase in IM/sub 3/ observed at a neutron fluence of 1.4 x 10/sup 15/ n/cm/sup 2/ and higher is mainly due to the non-linearity in device transconductance g /SUB m/ and output conductance g /SUB o/ . The model also indicates that IM/sub 3/ is dominated by the device g /SUB m/ or g /SUB o/ non-linearity depending on applied gate bias.

• Research Organization: RIT, Troy, NY 12181
• OSTI ID: 6046437
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 29:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMPLIFIERS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRONIC EQUIPMENT
EQUIPMENT
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IRRADIATION
NEUTRON FLUENCE
PHYSICAL PROPERTIES
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS