Neutron induced damage in GaAs MESFETs
Conference
·
OSTI ID:512980
- Universita di Padova (Italy); and others
Implanted channel GaAs MESFETs subjected to neutron irradiation show large modifications of the pinch-off voltage, open-channel saturation current, and transconductance in agreement with previous results. In this work we demonstrate how an experimental technique, based on the frequency dispersion of the transconductance, g{sub m}(f), and output conductance, g{sub D}(f), can identify the deep levels induced by neutron irradiation through measurements performed directly on packaged devices. After irradiation, a frequency dispersion of the transconductance has been observed, while it was flat in the unirradiated device. The g{sub m}(f) curve shape depends on the device bias conditions, and it has permitted for the first time to evaluate the activation energy of different deep levels induced by neutron irradiation in MESFETs.
- OSTI ID:
- 512980
- Report Number(s):
- CONF-961123--
- Country of Publication:
- United States
- Language:
- English
Similar Records
Radiation effects on distortion characteristics of power GaAs Mesfet amplifiers
Neutron radiation effects in GaAs MESFET power amplifiers
Characteristics of GaAs buffered FET logic (BFL) MESFET's and inverters exposed to high-energy neutrons
Journal Article
·
Tue Nov 30 23:00:00 EST 1982
· IEEE Trans. Nucl. Sci.; (United States)
·
OSTI ID:6046437
Neutron radiation effects in GaAs MESFET power amplifiers
Thesis/Dissertation
·
Thu Dec 31 23:00:00 EST 1981
·
OSTI ID:6260235
Characteristics of GaAs buffered FET logic (BFL) MESFET's and inverters exposed to high-energy neutrons
Journal Article
·
Thu Jan 31 23:00:00 EST 1991
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
·
OSTI ID:5879033