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RF-sputter-deposited magnesium oxide films as high-quality adjustable tunnel barriers

Conference · · IEEE Trans. Magn.; (United States)
OSTI ID:6044374
High quality RF-sputtered MgO films are used as tunnel barriers to fabricate small area, niobium nitride Josephson tunnel junctions. A magnesium oxide barrier deposited as a single layer, or as a multilayer film, results in devices with similar characteristics. Annealing trilayers at temperatures in excess of 250/sup 0/C for several hours decrease junction current density and improve device quality presumably by increasing barrier heights through reducing resonant tunneling states. A self-aligned process utilizing only two mask levels is used to produce junctions as small as 0.5 ..mu..m/sup 2/ with excellent critical current uniformity. These junctions exhibit energy gaps of 5.1 mV and low subgap currents at current densities in excess of 1000 A/cm/sup 2/ which make them suitable for a variety of applications such as SIS mixers and logic circuits.
Research Organization:
HYPRES, Inc., Elmsford, NY (US)
OSTI ID:
6044374
Report Number(s):
CONF-880812-
Conference Information:
Journal Name: IEEE Trans. Magn.; (United States) Journal Volume: 25:2
Country of Publication:
United States
Language:
English

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