Adsorption-controlled growth of Bi{sub 4}Ti{sub 3}O{sub 12} by reactive MBE
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802-5005 (United States)
- Center for Materials Science, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
- University of Michigan, Department of Materials Science and Engineering, Ann Arbor, Michigan 48109-2136 (United States)
Adsorption-controlled conditions have been identified and utilized to grow epitaxial bismuth titanate thin films by reactive molecular beam epitaxy. Growth of stoichiometric, phase pure, c-axis oriented, epitaxial films is achieved by supplying a large overabundance of bismuth and ozone continuously to the surface of the depositing film. Titanium is supplied to the film in the form of shuttered bursts each containing a three monolayer dose of titanium to grow one formula unit of Bi{sub 4}Ti{sub 3}O{sub 12}. It is seen from measured film thickness, Rutherford backscattering spectrometry composition measurements, monitoring of reflection high-energy electron diffraction half-order intensity oscillations during growth, and {ital in situ} flux measurements using atomic absorption spectroscopy that at suitable temperature and ozone background pressure, the titanium sticking coefficient approaches one and the excess bismuth desorbs from the surface. Film growth proceeds by the formation of mounds whose step heights are predominantly integral multiples of a half-unit cell.{copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 604408
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 72; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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