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Ferroelectric bismuth titanate/superconductor (Y-Ba-Cu-O) thin-film heterostructures on silicon

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.106199· OSTI ID:5167342
; ; ; ; ;  [1]; ;  [2]; ;  [3]
  1. Bellcore, Red Bank, New Jersey (USA)
  2. Stanford University, Stanford, California (USA)
  3. Radiant Technologies, Albuquerque, New Mexico (USA)
The growth by pulsed-laser deposition of {ital c}-axis-oriented bismuth titanate (BTO)/YBa{sub 2}Cu{sub 3}O{sub 7}(YBCO) superconductor heterostructures on (001)-oriented Si with epitaxial yttria-stabilized ZrO{sub 2} as a buffer layer is reported. X-ray-diffraction studies of the heterostructures show that all the layers grow in the {ital c}-axis orientation, with a rocking angle of 1.0{degree}--1.2{degree} for the bismuth titanate layer and 0.6{degree}--0.8{degree} for the YBCO layer. Rutherford backscattering ion channeling yields of 28% at the surface have been obtained. Transmission electron microscopy of cross-sectioned samples reveal that the BTO layer has a significant density of translational boundaries that propagate at 45{degree} to the film surface. The BTO film exhibits ferroelectric hysteresis and a dielectric constant in the range of 180--200.
OSTI ID:
5167342
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 59:14; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English