Properties of stacked NbN tunnel junctions
Stacks of up to three tunnel junctions on top of each other were fabricated in NbN-MgO technique. Different preparation methods were tested, two gave favorable results. In the first one the whole stack is prepared in-situ and structured afterwards by lift-off and reactive and argon ion etching respectively. The authors investigated the resulting IV-characteristics of stacks of two NbN tunnel junctions with sumgap voltages of up to 8.3mV. Since it was not possible to establish electrical connections to the intermediate electrodes by this method, a second one was applied: each NbN/MgO-layer is prepared in a separate step and structured by lift-off. Here the IV-characteristics, the interaction between the tunnel junctions, and especially their rf-properties were investigated. Shapiro steps and photon assisted tunneling were observed in the IV-characteristics of a receiver junction, while the bottom tunnel junction was used as microwave generator.
- Research Organization:
- Institut fur Angewandte Physik der Justus-Liebig-Universitat Giessen, Giessen (DE); Univ. of Twente, Low Temperature Div., Enschede (NL)
- OSTI ID:
- 6043871
- Report Number(s):
- CONF-880812-
- Journal Information:
- IEEE Trans. Magn.; (United States), Journal Name: IEEE Trans. Magn.; (United States) Vol. 25:2; ISSN IEMGA
- Country of Publication:
- United States
- Language:
- English
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71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALKALINE EARTH METAL COMPOUNDS
ARGON IONS
CHALCOGENIDES
CHARGED PARTICLES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRONIC EQUIPMENT
EQUIPMENT
ETCHING
FABRICATION
IONS
JUNCTIONS
MAGNESIUM COMPOUNDS
MAGNESIUM OXIDES
MICROWAVE EQUIPMENT
NIOBIUM COMPOUNDS
NIOBIUM NITRIDES
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTORY METAL COMPOUNDS
RF SYSTEMS
SUPERCONDUCTING JUNCTIONS
SUPERCONDUCTIVITY
SURFACE FINISHING
TRANSITION ELEMENT COMPOUNDS
TUNNELING