Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Properties of stacked NbN tunnel junctions

Conference · · IEEE Trans. Magn.; (United States)
OSTI ID:6043871

Stacks of up to three tunnel junctions on top of each other were fabricated in NbN-MgO technique. Different preparation methods were tested, two gave favorable results. In the first one the whole stack is prepared in-situ and structured afterwards by lift-off and reactive and argon ion etching respectively. The authors investigated the resulting IV-characteristics of stacks of two NbN tunnel junctions with sumgap voltages of up to 8.3mV. Since it was not possible to establish electrical connections to the intermediate electrodes by this method, a second one was applied: each NbN/MgO-layer is prepared in a separate step and structured by lift-off. Here the IV-characteristics, the interaction between the tunnel junctions, and especially their rf-properties were investigated. Shapiro steps and photon assisted tunneling were observed in the IV-characteristics of a receiver junction, while the bottom tunnel junction was used as microwave generator.

Research Organization:
Institut fur Angewandte Physik der Justus-Liebig-Universitat Giessen, Giessen (DE); Univ. of Twente, Low Temperature Div., Enschede (NL)
OSTI ID:
6043871
Report Number(s):
CONF-880812-
Journal Information:
IEEE Trans. Magn.; (United States), Journal Name: IEEE Trans. Magn.; (United States) Vol. 25:2; ISSN IEMGA
Country of Publication:
United States
Language:
English

Similar Records

Insulator interface effects in sputter-deposited NbN/MgO/NbN (superconductor--insulator--superconductor) tunnel junctions
Journal Article · Wed Jul 01 00:00:00 EDT 1987 · J. Vac. Sci. Technol., A; (United States) · OSTI ID:6448717

Artificial oxide barriers for NbN tunnel junctions
Journal Article · Sat Dec 14 23:00:00 EST 1985 · J. Appl. Phys.; (United States) · OSTI ID:5031994

Josephson LSI fabrication technology using NbN/MgO/NbN tunnel junctions
Conference · Thu Feb 28 23:00:00 EST 1991 · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:6047532