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Effect of argon and hydrogen on deposition of silicon from tetrachlorosilane in cold plasmas

Conference ·
OSTI ID:6041690
The roles of Ar and H/sub 2/ on the decomposition of SiCl/sub 4/ in cold plasma were investigated by Langmuir probes and mass spectrometry. Decomposition of the reactant by Ar only has been found to be very slow. In presence of H/sub 2/ in the plasma SiCl/sub 4/ is decomposed by fast radical-molecule reactions which are further enhanced by Ar due to additional ion-molecule reactions in which more H radicals are produced. A model for the plasma-surface interactions during deposition of mu-Si in the Ar + H/sub 2/ + SiCl/sub 4/ system is presented.
Research Organization:
National Aeronautics and Space Administration, Cleveland, OH (USA). Lewis Research Center
OSTI ID:
6041690
Report Number(s):
N-86-17472; NASA-TM-87219; E-2820; CONF-851217-64
Country of Publication:
United States
Language:
English