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Mechanism of silicon film deposition in the RF plasma reduction of silicon tetrachloride

Journal Article · · Plasma Chem. Plasma Process.; (United States)
DOI:https://doi.org/10.1007/BF00571271· OSTI ID:6972782
Plasma-chemical reduction of SiCl/sub 4/ in mixtures with H/sub 2/ and Ar has been studied by optical emission spectroscopy (OES) and laser interferometry techniques. It has been found that the Ar:H/sub 2/ ratio strongly affects the plasma composition as well as the deposition (r /SUB D/ ) and etch (r /SUB E/ ) rates of Si:H, Cl films and that the electron impact dissociation is the most important channel for the production of SiCl /SUB x/ species, which are the precursors of the film growth. Chemisorption of SiCl /SUB x/ and the reactive surface reaction SiCl /SUB x/ + H ..-->.. -SiCl /SUB x-1/ + HCl are important steps in the deposition process. The suggested deposition model gives r /SUB d/ ..cap alpha.. (SiCl /SUB x/ )(H), in agreement with the experimental data. Etching of Si:H, Cl films occurs at high Ar:H/sub 2/ ratio when Cl atoms in the gas phase become appreciable and increases with increasing Cl concentration. The etch rate is controlled by the Cl atom chemisorption step.
Research Organization:
Univ. di Bari, Bari
OSTI ID:
6972782
Journal Information:
Plasma Chem. Plasma Process.; (United States), Journal Name: Plasma Chem. Plasma Process.; (United States) Vol. 6:2; ISSN PCPPD
Country of Publication:
United States
Language:
English

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