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Decomposition of SiCl/sub 4/ and deposition of Si in inductively coupled plasmas of H/sub 2/ + SiCl/sub 4/

Journal Article · · Plasma Chem. Plasma Process.; (United States)
DOI:https://doi.org/10.1007/BF01019176· OSTI ID:6448130
The mechanism of homogeneous reactions in plasmas of H/sub 2/ + 5% SiCl/sub 4/ was studied by mass spectrometry and was compared to the mechanism observed in plasmas of Ar + H/sub 2/ + SiCl/sub 4/. Contrary to the behavior with Ar, the results indicate that without argon the SiCl/sub 4/ molecule undergoes only fragmentation and the deposition proceeds through SiCl/sub 2/. No polymerization was observed. The deposition rates of ..mu..c-Si were lower and the amounts of chlorine incorporated in the films were higher in the plasma of SiCl/sub 4/ + H/sub 2/ than in the argon-containing plasma.
Research Organization:
Ben-Gurion Univ. of the Negev, Beer-Sheva, Israel
OSTI ID:
6448130
Journal Information:
Plasma Chem. Plasma Process.; (United States), Journal Name: Plasma Chem. Plasma Process.; (United States) Vol. 7:2; ISSN PCPPD
Country of Publication:
United States
Language:
English

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